Nucleation and growth of (10͞11) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep26040.pdf
Reference27 articles.
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3. Park, S. H. Crystal orientation effects on electronic properties of wurtzite GaN/AlGaN quantum wells with spontaneous and piezoelectric polarization. J. Appl. Phys. 39, 3478–3482 (2000).
4. Waltereit, P. et al. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes. Nature 406, 865–868 (2000).
5. Hideki, H., Noritoshi, M., Sachie, F., Shiro, T. & Norihiko, K. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes. Jpn. J. Appl. Phys. 53, 100209 (2014).
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