Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates-Reference-Cited by-同舟云学术

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Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates

Published:2010-05 Issue:11 Volume:312 Page:1823-1827
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Mauder C.,Reuters B.,Rahimzadeh Khoshroo L.,Rzheutskii M.V.,Lutsenko E.V.,Yablonskii G.P.,Woitok J.F.,Heuken M.,Kalisch H.,Jansen R.H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference22 articles.

1. Growth of M-Plane GaN(11-00): A Way to Evade Electrical Polarization in Nitrides

2. Reduced nonthermal rollover of wide-well GaInN light-emitting diodes

3. Impact of nucleation conditions on the structural and optical properties ofM-plane GaN(11̄00) grown on γ-LiAlO2

4. Growth studies of GaN and alloys on LiAlO 2 by MOVPE

5. High-quality m-plane GaN thin films deposited on γ-LiAlO2 by ion-beam-assisted molecular-beam epitaxy

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High performance UV photodetectors based on W doped δ -Ta2O5 single crystalline films;Applied Physics Letters;2023-06-19

2. Growth and Characterization of M-Plane GaN Thin Films Grown on γ-LiAlO2 (100) Substrates;Scanning;2017

3. Reprint of: Electron channelling contrast imaging for III-nitride thin film structures;Materials Science in Semiconductor Processing;2016-11

4. Characterization of M -plane GaN thin films grown on misoriented γ-LiAlO 2 (100) substrates;Journal of Crystal Growth;2016-09

5. Electron channelling contrast imaging for III-nitride thin film structures;Materials Science in Semiconductor Processing;2016-06

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