Growth studies of GaN and alloys on LiAlO 2 by MOVPE-Reference-Cited by-同舟云学术

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Growth studies of GaN and alloys on LiAlO 2 by MOVPE

Published:2005-04-11 Issue:7 Volume:2 Page:2161-2165
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Dikme Y.¹,Gemmern P. van¹,Chai B.²,Hill D.²,Szymakowski A.¹,Kalisch H.¹,Heuken M.³⁴,Jansen R. H.¹

Affiliation:

1. Institut für Theoretische Elektrotechnik, RWTH Aachen, Kopernikusstr. 16, 52074 Aachen, Germany

2. Crystal Photonics, 2729 N. Financial Ct., Sanford, FL 32773, USA

3. AIXTRON AG, Kackertstr. 15‐17, 52072 Aachen, Germany

4. Institut für Halbleitertechnik, RWTH Aachen, Templergraben 55, 52056 Aachen, Germany

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200461414

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Heteroepitaxy of Nonpolar and Semipolar GaN;Springer Series in Materials Science;2011-11-24

2. Mechanisms of impurity incorporation during MOVPE growth of m-plane GaN layers on LiAlO2;physica status solidi (c);2011-05-13

3. Comprehensive Survey for the Frontier Disciplines Progress of negative electron affinity GaN photocathode;Acta Physica Sinica;2011

4. Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO2 substrates;Journal of Crystal Growth;2011-01

5. Anisotropic properties of MOVPE-grown m-plane GaN layers on LiAlO2 substrates;physica status solidi (b);2010-06-23

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