Author:
Fu Xiao-Qian ,Chang Ben-Kang ,Li Biao ,Wang Xiao-Hui ,Qiao Jian-Liang ,
Abstract
GaN is becoming a promising material in ultraviolet detection and vacuum electronic source field for its good performance. High quantum efficiencies of greater than 70% and 30% have been achieved for the opaque mode and transparent mode GaN photocathode, respectively. This paper reviews the progress of GaN photocahtode in three important fields,including structure design, surface cleaning and Cs/O activation, analyzes the key factors influencing the quantum efficiency, and evaluates the prospect for its development.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Reference64 articles.
1. Uchiiyama S, Takagi Y, Niigaki M, Kan H 2005 Appl. Phys. Lett. 86 103511
2. Siegmund O,Vallerga J, McPhate J,Malloy J,Tremsin A, Martin A,Ulmer M, Wessels B 2006 Nucl. Instrum. Meth. A 567 89
3. Leopold D J, Buckley J H,Rebillot P 2005 J. Appl. Phys. 98 043525
4. Siegmund O, Tremsin A ,Vallerga J, McPhatea J, Hull J, Malloy J, Dabiran A 2008 Proc. SPIE 7021 70211B-1
5. Siegmund O H W, Tremsin A S, Martin A, Malloy J, Ulmer M, Wessels B 2003 Proc. SPIE 5164 134
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