One-sidewall-seeded epitaxial lateral overgrowth of a-plane GaN by metalorganic vapor-phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
2. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
3. Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells
4. Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire
5. Improved quality (112¯0)a-plane GaN with sidewall lateral epitaxial overgrowth
Cited by 32 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Metalorganic vapour-phase epitaxy of AlGaN/GaN heterostructures on chlorine plasma etched GaN templates without buried conductive layer;Materials Science in Semiconductor Processing;2020-03
2. Optical and polarization properties of nonpolar InGaN-based light-emitting diodes grown on micro-rod templates;Scientific Reports;2019-07-05
3. Improvement in the crystal quality of non-polar a-plane GaN directly grown on an SiO2 stripe-patterned r-plane sapphire substrate;CrystEngComm;2019
4. Non-polar (11-20) GaN grown on sapphire with double overgrowth on micro-rod/stripe templates;Semiconductor Science and Technology;2018-11-20
5. High-quality nonpolara-plane GaN epitaxial films grown onr-plane sapphire substrates by the combination of pulsed laser deposition and metal–organic chemical vapor deposition;Japanese Journal of Applied Physics;2018-04-09
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3