MOVPE growth and properties of GaN on (111)Si using an AlInN intermediate layer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Thermal stability of GaN on (111) Si substrate
2. GaN-based optoelectronics on silicon substrates
3. GaN on Si Substrate with AlGaN/AlN Intermediate Layer
4. GaN-based optoelectronic devices on sapphire and Si substrates
5. Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers andin situSixNy masking
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Annealing effect on threading dislocations in a GaN grown on Si substrate;Journal of Crystal Growth;2017-06
2. Nature of yellow luminescence band in GaN grown on Si substrate;Japanese Journal of Applied Physics;2014-09-19
3. MOVPE growth of GaN on Si substrate with 3C-SiC buffer layer;Japanese Journal of Applied Physics;2014-04-25
4. Growth of GaN on Si(111) Substrates via a Reactive-Sputter-Deposited AlN Intermediate Layer;Japanese Journal of Applied Physics;2013-08-01
5. Control of polarity and defects in the growth of AlN films on Si (111) surfaces by inserting an Al interlayer;Current Applied Physics;2012-03
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