Annealing effect on threading dislocations in a GaN grown on Si substrate
Author:
Funder
MEXT, Japan
Scientific Research
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference34 articles.
1. III–V Compound Semiconductors -Integration with Silicon Based Microelectronics,2011
2. Thermal stability of GaN on (111) Si substrate
3. GaN-based optoelectronics on silicon substrates
4. High Drain Current Density E-Mode ${\rm Al}_{2}{\rm O}_{3}$/AlGaN/GaN MOS-HEMT on Si With Enhanced Power Device Figure-of-Merit $(4\times 10^{8}~{\rm V}^{2}\Omega^{-1}{\rm cm}^{-2})$
5. Thermal stresses in elastic multilayer systems
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