Low-temperature homoepitaxial growth of 4H–SiC with CH3Cl and SiCl4 precursors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Present Status and Future Prospects for Electronics in EVs/HEVs and Expectations for Wide Bandgap Semiconductor Devices
2. Energy Efficiency: The Commercial Pull for SiC Devices
3. Lower-Temperature Epitaxial Growth of 4H-SiC Using CH3Cl Carbon Gas Precursor
4. Epitaxial growth of 4H–SiC at low temperatures using CH3Cl carbon gas precursor: Growth rate, surface morphology, and influence of gas phase nucleation
5. New Achievements on CVD Based Methods for SiC Epitaxial Growth
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5. Synthesis and structural control of silicon and silicide nanowires/microrods using metal chloride sources;Japanese Journal of Applied Physics;2015-06-03
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