Epitaxial growth of 4H–SiC at low temperatures using CH3Cl carbon gas precursor: Growth rate, surface morphology, and influence of gas phase nucleation-Reference-Cited by-同舟云学术

Epitaxial growth of 4H–SiC at low temperatures using CH3Cl carbon gas precursor: Growth rate, surface morphology, and influence of gas phase nucleation

Published:2006-09 Issue:2 Volume:294 Page:260-267
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Koshka Yaroslav,Lin Huang-De,Melnychuk Galyna,Wood Colin

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference17 articles.

1. Silicon Carbide Crystal and Substrate Technology: A Survey of Recent Advances

2. Recent Achievements and Future Challenges in SiC Homoepitaxial Growth

3. Advances in SiC Materials and Technology for Schottky Diode Applications

4. Fast SiC Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth Developments

5. Growth mechanism of 6H‐SiC in step‐controlled epitaxy

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