MOVPE of AlN-free hexagonal GaN/cubic SiC/Si heterostructures for vertical devices
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours
2. Characteristics of indium-gallium-nitride multiple-quantum-well blue laser diodes grown by MOCVD
3. Stimulated emission with the longest wavelength in the blue region from GaInN/GaN multi-quantum well structures
4. Short-channel GaN/AlGaN doped channel heterostructure field effect transistors with 36.1 cutoff frequency
5. High mobility AlGaN/GaN heterostructures grown by gas-source molecular beam epitaxy
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1. Zinc-Blende GeC Stabilized on GaN (001): An Ab Initio Study;Advances in Condensed Matter Physics;2022-01-30
2. GaN-On-Si Epitaxy;digital Encyclopedia of Applied Physics;2019-08-20
3. Epitaxial growth optimization of AlGaN/GaN high electron mobility transistor structures on 3C-SiC/Si;Journal of Applied Physics;2019-06-21
4. Investigation of GaN-based light-emitting diodes on various substrates;Gallium Nitride Materials and Devices XIII;2018-02-23
5. GaN-based light-emitting diodes on various substrates: a critical review;Reports on Progress in Physics;2016-04-08
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