A complete crystallographic study of GaN epitaxial morphologies in selective area growth by hydride vapour phase epitaxy (SAG-HVPE)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. Wet etching of GaN, AlN, and SiC: a review
2. Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy
3. Fabrication of GaN Hexagonal Pyramids on Dot-Patterned GaN/Sapphire Substrates via Selective Metalorganic Vapor Phase Epitaxy
4. Selective area epitaxy of GaN for electron field emission devices
5. GaN hexagonal microprisms with smooth vertical facets fabricated by selective metalorganic vapor phase epitaxy
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1. Design and Simulation of Enhancement-Mode Vertical Superjunction GaN HEMT with Improved Ron and Cut-Off Frequency;IETE Journal of Research;2023-10-29
2. Optimization of selective-area regrown n-GaN via MOCVD for high-frequency HEMT;Applied Physics Letters;2021-12-27
3. Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays;Crystal Growth & Design;2021-07-27
4. Study of AlGaN/GaN Vertical Superjunction HEMT for Improvement of Breakdown Voltage and Specific On-Resistance;IEEE Access;2021
5. Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions;Chinese Physics B;2018-04
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