Selective area epitaxy of GaN for electron field emission devices
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference4 articles.
1. Fabrication of GaN Hexagonal Pyramids on Dot-Patterned GaN/Sapphire Substrates via Selective Metalorganic Vapor Phase Epitaxy
2. R.D. Underwood, D. Kapolnek, B.P. Keller, S. Keller, S.P. DenBaars and U.K. Mishra, Solid State Electron., submitted.
3. Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy
4. Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN
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