Influence of hydrogen and TMIn on indium incorporation in MOVPE growth of InGaN layers-Reference-Cited by-同舟云学术

Influence of hydrogen and TMIn on indium incorporation in MOVPE growth of InGaN layers

Published:2014-09 Issue: Volume:402 Page:330-336
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Czernecki Robert,Kret Slawomir,Kempisty Pawel,Grzanka Ewa,Plesiewicz Jerzy,Targowski Greg,Grzanka Szymon,Bilska Marta,Smalc-Koziorowska Julita,Krukowski Stanislaw,Suski Tadek,Perlin Piotr,Leszczynski Mike

Funder

grant of Polish National Agency of Research and Development

National Science Centre (NCN) of Poland

NCBiR

the European Union within European Regional Development Fund, through grant Innovative Economy

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference30 articles.

1. High‐brightness InGaN/AlGaN double‐heterostructure blue‐green‐light‐emitting diodes

2. Ridge‐geometry InGaN multi‐quantum‐well‐structure laser diodes

3. Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells

4. Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy

5. Improved quality of InGaN/GaN multiple quantum wells by a strain relief layer

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