Numerical simulations of SiGe crystal growth by the traveling liquidus-zone method in a microgravity environment
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. Strained Si/strained Ge dual-channel heterostructures on relaxed Si0.5Ge0.5 for symmetric mobility p-type and n-type metal-oxide-semiconductor field-effect transistors
2. Growth and fundamental properties of SiGe bulk crystals
3. Silicon transport under rotating and combined magnetic fields in liquid phase diffusion growth of SiGe
4. Floating zone growth of Si-rich SiGe bulk crystal using pre-synthesized SiGe feed rod with uniform composition
5. A comparative study on the growth of germanium–silicon single crystals grown by the vertical Bridgman and axial heat processing techniques
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1. Numerical Investigation on the Effects of InSb Geometry on the InGaSb Crystal Growth Under Microgravity;Microgravity Science and Technology;2023-09-15
2. Numerical investigation of the effects of axial temperature gradient and cooling rate on InGaSb crystal growth under micro-gravity;Journal of Crystal Growth;2023-04
3. A review on single crystal and thin film Si–Ge alloy: growth and applications;Materials Advances;2022
4. Numerical investigation of growth interface shape and compositional distributions in SiGe crystals grown by the TLZ method in the International Space Station;Journal of Crystal Growth;2021-07
5. Growth of homogeneous mixed A1-xBx bulk crystals: Analytical prediction, phase-field modeling and experiment comparison;Materialia;2019-03
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