Numerical Investigation on the Effects of InSb Geometry on the InGaSb Crystal Growth Under Microgravity
Author:
Publisher
Springer Science and Business Media LLC
Subject
Applied Mathematics,General Physics and Astronomy,General Engineering,Modeling and Simulation
Link
https://link.springer.com/content/pdf/10.1007/s12217-023-10072-x.pdf
Reference21 articles.
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2. Arai, Y., Kinoshita, K., Tsukada, T., Kubo, M., Abe, K., Sumioka, S., Baba, S., Inatomi, Y.: Study of SiGe crystal growth Interface processed in microgravity. Cryst. Growth Des. 18, 3697–3703 (2018). https://doi.org/10.1021/acs.cgd.8b00544
3. Bennon, W.D., Incropera, F.P.: A continuum model for momentum, heat and species transport in binary solid-liquid phase change systems—I. Model formulation. Int. J. Heat Mass Transfer, 30, 2161–2170 (1987). https://doi.org/10.1016/0017-9310(87)90094-9
4. Bright, T.J., Wang, L.P., Zhang, Z.M.: Performance of Near-Field Thermophotovoltaic Cells Enhanced With a Backside Reflector. J. Heat Transfer, 136(6), (2014). https://doi.org/10.1115/1.4026455
5. Chen, N.F., Zhong, X., Lin, L.: Comparison of field effect characteristics between space grown and earth-grown gallium arsenide single crystal substrates. Appl. Phys. Lett. 78, 478–479 (2001). https://doi.org/10.1063/1.1342201
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