Study of SiGe Crystal Growth Interface Processed in Microgravity
Author:
Affiliation:
1. Japan Aerospace Exploration Agency, 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505, Japan
2. Meiji University, 1-1-1 Higashi-mita, Kawasaki, Kanagawa 214-8571, Japan
3. Tohoku University, 6-6-07 Aramaki, Aoba-ku, Sendai 980-8579, Japan
Funder
Ministry of Education, Culture, Sports, Science and Technology
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.8b00544
Reference25 articles.
1. Model for gradient formation in polycrystalline germanium–silicon alloy GRIN crystals via Czochralski crystal growing
2. Functionally Graded Ge1–xSix Thermoelectrics by Simultaneous Band Gap and Carrier Density Engineering
3. Si1−Ge (x≥0.2) crystal growth in the absence of a crucible
4. Numerical study of liquid phase diffusion growth of SiGe subjected to accelerated crucible rotation
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