Modification of the surface morphology of 4H-SiC by addition of Sn and Al in solution growth with SiCr solvents-Reference-Cited by-同舟云学术

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Modification of the surface morphology of 4H-SiC by addition of Sn and Al in solution growth with SiCr solvents

Published:2017-01 Issue: Volume:458 Page:37-43
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Komatsu Naoyoshi,Mitani Takeshi,Hayashi Yuichiro,Kato Tomohisa,Harada Shunta,Ujihara Toru,Okumura Hajime

Funder

Council for Science, Technology and Innovation (CSTI)

Strategic Innovation Promotion Program (SIP)

NEDO

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference46 articles.

1. Current status and advances in the growth of SiC

2. Solution growth of single crystalline 6H, 4H-SiC using Si–Ti–C melt

3. High-Efficiency Conversion of Threading Screw Dislocations in 4H-SiC by Solution Growth

4. Conversion Mechanism of Threading Screw Dislocation during SiC Solution Growth

5. Evolution of threading screw dislocation conversion during solution growth of 4H-SiC

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Suppression of SiC Inclusions in 4H-SiC Crystals Grown from Si–Cr–C-Based Solution Saturated with SiC;Crystal Growth & Design;2024-03-06

2. Effect of Solution Components on Solvent Inclusion in SiC Solution Growth;Crystal Growth & Design;2024-02-02

3. Optimization of Carbon Transport in Top-Seeded Solution Growth of Al-Doped Sic;2024

4. Quantification of nitrogen in heavily doped silicon carbide by soft X-ray emission spectroscopy;Journal of Crystal Growth;2023-10

5. Analysis of Defect Propagation in SiC Crystals Formed by Solution Growth and Sublimation Growth and High Quality SiC Crystal Growth by the Hybrid Method Combining both Growth Techniques;Vacuum and Surface Science;2023-04-10

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