Current status and advances in the growth of SiC
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. SiC Materials and Devices;Dmitriev,1998
2. Morphology and polytype disturbances in sublimation growth of SiC epitaxial layers
3. Growth-related structural defects in seeded sublimation-grown SiC
4. Controlled sublimation growth of single crystalline 4H‐SiC and 6H‐SiC and identification of polytypes by x‐ray diffraction
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