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Growth-related structural defects in seeded sublimation-grown SiC

  • Published:1997-08 Issue:10 Volume:6 Page:1272-1275
  • ISSN:0925-9635
  • Container-title:Diamond and Related Materials
  • language:en
  • Short-container-title:Diamond and Related Materials

Author:

Tuominen M.,Yakimova R.,Prieur E.,Ellison A.,Tuomi T.,Vehanen A.,Janzén E.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A niching genetic algorithm applied to optimize a SiC-bulk crystal growth system;Journal of Crystal Growth;2017-06

2. Electrical characterization of 4H-SiC Schottky diodes with RuWO x Schottky contacts before and after irradiation by fast electrons;physica status solidi (a);2012-05-02

3. Growth and Characterization of Silicon Carbide Crystals;Springer Handbook of Crystal Growth;2010

4. Silica on Silicon Carbide;Critical Reviews in Solid State and Materials Sciences;2008-02-13

5. Electrical characterization of 4H–SiC Schottky diodes with a RuO2 and a RuWO x Schottky contacts;Journal of Materials Science: Materials in Electronics;2007-10-04
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