Defect analysis in Lely-grown 6H SiC
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference27 articles.
1. Investigation of growth processes of ingots of silicon carbide single crystals
2. Structural macro-defects in 6H-SiC wafers
3. Observations of the influence of stress fields on the shape of growth and dissolution spirals
4. Spiral growth and surface roughening: Developments since Burton, Cabrera and Frank
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4. Sublimation Epitaxial Growth of Hexagonal and Cubic SiC;Comprehensive Semiconductor Science and Technology;2011
5. Materials Science and Engineering of Bulk Silicon Carbides;SiC Power Materials;2004
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