Orientation-controlled epitaxial lateral overgrowth of semipolar GaN on Si(001) with a directionally sputtered AlN buffer layer-Reference-Cited by-同舟云学术

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Orientation-controlled epitaxial lateral overgrowth of semipolar GaN on Si(001) with a directionally sputtered AlN buffer layer

Published:2017-06 Issue: Volume:468 Page:547-551
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Lee Ho-Jun,Bae Si-Young,Lekhal Kaddour,Tamura Akira,Suzuki Takafumi,Kushimoto Maki,Honda Yoshio,Amano Hiroshi

Funder

KAKENHI

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. Leakage current and reverse-bias luminescence in InGaN-based light-emitting diodes

2. InGaN laser diodes with 50 mW output power emitting at 515 nm

3. Interplay of built-in potential and piezoelectric field on carrier recombination in green light emitting InGaN quantum wells

4. Spontaneous polarization and piezoelectric constants of III-V nitrides

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Initial Stages of Growth of the GaN(11$$\bar {2}$$2) Layer on a Nano-structured Si(113) Substrate;Semiconductors;2023-03

2. Raman spectra of semi-polar (11-22) InGaN thick films;Vibrational Spectroscopy;2022-03

3. Initial Stages of Growth of Semipolar AlN on a Nanopatterned Si(100) Substrate;Semiconductors;2021-10

4. Crystallographic orientation and strain distribution in AlN seeds grown on 6H–SiC substrates by the PVT method;CrystEngComm;2021

5. Emergence of high quality sputtered III-nitride semiconductors and devices;Semiconductor Science and Technology;2019-08-12

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