Leakage current and reverse-bias luminescence in InGaN-based light-emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3257368
Reference14 articles.
1. History, Development, and Applications of High-Brightness Visible Light-Emitting Diodes
2. Correlation of spectral luminescence with threading dislocations in green-light-emitting InGaN quantum wells
3. Control of quantum-confined Stark effect in InGaN∕GaN multiple quantum well active region by p-type layer for III-nitride-based visible light emitting diodes
4. Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes
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3. Two‐In‐One: End‐Emitting Blue LED and Self‐Powered UV Photodetector based on Single Trapezoidal PIN GaN Microwire for Ambient Light UV Monitoring and Feedback;Small Methods;2023-04-24
4. Investigation and direct observation of sidewall leakage current of InGaN-Based green micro-light-emitting diodes;Optics Express;2022-05-26
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