Control of quantum-confined Stark effect in InGaN∕GaN multiple quantum well active region by p-type layer for III-nitride-based visible light emitting diodes-Reference-Cited by-同舟云学术

Control of quantum-confined Stark effect in InGaN∕GaN multiple quantum well active region by p-type layer for III-nitride-based visible light emitting diodes

Published:2008-03-10 Issue:10 Volume:92 Page:101113
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ryou J.-H.,Lee W.,Limb J.,Yoo D.,Liu J. P.,Dupuis R. D.,Wu Z. H.,Fischer A. M.,Ponce F. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2894514

Reference21 articles.

1. Department of Energy Workshop on Solid State Lighting;Krames M.,2003

2. Fourth China Internal Forum on Solid-State Lighting (China SSL);Craford G.,2007

3. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures

4. Nitride-based semiconductors for blue and green light-emitting devices

5. Microstructure and electronic properties of InGaN alloys

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