1. High-power GaN-based semiconductor lasers;Ikeda;Phys. Status Solidi (C),2004
2. M. Bauer, A. Lisauskas, S. Boppel, M. Mundt, V. Krozer, H. Roskos, S. Chevtchenko, J. Würfl, W. Heinrich, and G. Tränkle, Bow-tie-antenna-coupled terahertz detectors using AlGaN/GaN field-effect transistors with 0.25 micrometer gate length, in: Proceedings of Microwave Integrated Circuits Conference (EuMIC), 2013 European, pp. 212–215, Oct 2013.
3. Plasmoinic biosensors: know your molecues;Liu;Nat. Mater.,2012
4. High Si and Ge n-type doping of GaN doping ‐ limits and impact on stress;Fritze;Appl. Phys. Lett.,2012
5. Effect of scattering by strain fields surrounding edge dislocations on electron transport in two-dimensional electron gases;Jena;Appl. Phys. Lett.,2002