Polarity dependence of AlN {0001} decomposition in flowing H2-Reference-Cited by-同舟云学术

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Polarity dependence of AlN {0001} decomposition in flowing H2

Published:2007-07 Issue:2 Volume:305 Page:366-371
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kumagai Yoshinao,Akiyama Kazuhiro,Togashi Rie,Murakami Hisashi,Takeuchi Misaichi,Kinoshita Toru,Takada Kazuya,Aoyagi Yoshinobu,Koukitu Akinori

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference32 articles.

1. Report on the growth of bulk aluminum nitride and subsequent substrate preparation

2. Seeded growth of AlN bulk single crystals by sublimation

3. Bulk AlN crystal growth: self-seeding and seeding on 6H-SiC substrates

4. Structural properties of AlN crystals grown by physical vapor transport

5. Sublimation growth of AlN bulk crystals in Ta crucibles

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1. Effect of the Twist Crystallinity of N‐Polar AlN Underlayer on the Electrical Properties of GaN/AlN Structures;physica status solidi (a);2024-06-24

2. Si‐Doping Effects in AlGaN Channel Layer on Performance of N‐Polar AlGaN/AlN FETs;physica status solidi (a);2023-07-28

3. Understanding the 2D-material and substrate interaction during epitaxial growth towards successful remote epitaxy: a review;Nano Convergence;2023-04-28

4. Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus Si _x N _y;Nanotechnology;2023-03-28

5. Influence of growth rate on homoepitaxial growth of AlN at 1450 °C by hydride vapor phase epitaxy;Applied Physics Express;2022-10-21

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