Experimental study of trimethyl aluminum decomposition-Reference-Cited by-同舟云学术

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Experimental study of trimethyl aluminum decomposition

Published:2017-09 Issue: Volume:473 Page:6-10
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Zhang Zhi,Pan Yang,Yang Jiuzhong,Jiang Zhiming,Fang Haisheng

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference22 articles.

1. Springer Handbook of Crystal Growth;Dhanaraj,2010

2. W. Shan, et al., New Developments in Dilute Nitride Semiconductor Research, 2006, pp. 399–428.

3. F.H. Yang, Modern metal-organic chemical vapor deposition (MOCVD) reactors and growing nitride-based materials. Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies and Applications, 2014: p. 27–65.

4. Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1−xN thin films at low temperatures;Ozgit-Akgun;J. Mater. Chem. C,2014

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1. A density functional theory study on the gas-phase formation of InGaN by metalorganic chemical vapor deposition;Journal of Crystal Growth;2024-04

2. Formation of Al-incorporated SiC thin films by chemical vapor deposition of vinylsilane mixed with trimethylaluminum;Japanese Journal of Applied Physics;2024-02-22

3. Synthesis and characterization of aluminum-doped graphitic carbon;MRS Communications;2024-02-20

4. Insights into the decomposition of zirconium acetylacetonate using synchrotron radiation: Routes to the formation of volatile Zr-intermediates;Journal of Materials Research;2022-05-06

5. Atomic layer etching of Al₂O₃ with NF₃ plasma fluorination and trimethylaluminum ligand exchange;Journal of Vacuum Science & Technology A;2022-05

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