1. M. Dauelsberg. Progress in Modeling of III-Nitride MOVPE. [J] Progress in Crystal Growth and Characterization of Materials, 66(2020)100486.
2. Metal organic vapour phase epitaxy of AlN, GaN, InN and their alloys: a key chemical technology for advanced device applications;Watson;[J] Coord. Chem. Reviews,2010
3. Review - Group III-nitride-based ultraviolet light-emitting diodes: Ways of increasing external quantum efficiency.[J] ECS Journal of Solid State;Park;Sci. Technol.,2017
4. A.K.TanN, A.Hamzah, M.A.Ahmad, S.S.Ng, Z.Hassan. Recent advances and challenges in the MOCVD growth of indium gallium nitride: A brief review. [J] Materials Science in Semiconductor Processing, 143(2022)106545.
5. Thermodynamic considerations of the vapor phase reactions in III–nitride metal organic vapor phase epitaxy. [J];Sekiguchi;Jpn. J. Appl. Phys.,2017