Beryllium compensation doped InGaAs/GaAsSb superlattice photodiodes-Reference-Cited by-同舟云学术

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Beryllium compensation doped InGaAs/GaAsSb superlattice photodiodes

Published:2017-11 Issue: Volume:477 Page:100-103
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Jin Chuan,Wang Fangfang,Xu Qingqing,Yu Chengzhang,Chen Jianxin,He Li

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Shanghai Natural Science Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. Terahertz quantum cascade lasers based on type II InGaAs/GaAsSb/InP;Deutsch;Appl. Phys. Lett.,2010

2. Probing scattering mechanisms with symmetric quantum cascade lasers;Deutsch;Opt. Exp.,2013

3. H. Inada, H. Mori, Y. Nagai, Y. Iguchi, T. Saitoh, K. Fujii, T. Ishizuka, K. Akita, MOVPE grown InGaAs/GaAsSb type II quantum well photodiode for SWIR focal plane array, in: Proceedings of SPIE - The International Society for Optical Engineering, vol. 8012, 2011.

4. Magnetic-field assisted performance of InGaAs/GaAsSb terahertz quantum cascade lasers;Maëro;Appl. Phys. Lett.,2013

5. A long-wavelength photodiode on InP using lattice-matched GaInAs-GaAsSb type-II quantum wells;Sidhu;IEEE Photon. Technol. Lett.,2005

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InP-Based Broadband Photodetectors With InGaAs/GaAsSb Type-II Superlattice;IEEE Electron Device Letters;2022-05

2. Evaluation of channel transmission of nanoelectronic devices on low-dimensional structures with quantum confinement;Journal of Physics: Conference Series;2020-06-01

3. Deep levels analysis in wavelength extended InGaAsBi photodetector;Semiconductor Science and Technology;2019-08-28

4. Investigation of deep level defects on Beryllium compensation doping of In053Ga047As/GaAs049Sb051 type-II superlattice photodiodes;Optics Express;2018-06-04

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