Evaluation of channel transmission of nanoelectronic devices on low-dimensional structures with quantum confinement

Abstract

Abstract A methodology has been developed for evaluation the channel transmission of nanoelectronic devices on low-dimensional 2D structures with quantum confinement and transverse current transfer. The advantage of the developed methodology is to ensure the numerical stability and increased speed of the computational model of channel transmission with a different number of heterostructure layers, which allows optimizing the calculation of the current-voltage characteristics of nanoelectronic devices and predicting their electrical parameters.