Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference33 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. Low-threshold 1317-nm InGaAsN quantum-well lasers with GaAsN barriers
3. Very low threshold current density 1.3μm GaInNAs single-quantum well lasers grown by molecular beam epitaxy
4. High-frequency modulation and bandwidth limitations of GaInNAs double-quantum-well lasers
5. 1.34 [micro sign]m GaInNAs quantum well lasers with low room-temperature threshold current density
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1. Molecular Beam Epitaxy of Dilute Nitride Optoelectronic Devices;Molecular Beam Epitaxy;2018
2. Morphological and chemical instabilities of nitrogen delta-doped GaAs/(Al, Ga)As quantum wells;Applied Physics Letters;2017-05-15
3. Formation of Minibands on Superlattice Structure with Periodically Arranged δ-Doped Nitrogen into GaAs;Applied Physics Express;2013-04-01
4. Electro-optic properties of GaInAsSb/GaAs quantum well for high-speed integrated optoelectronic devices;Applied Physics Letters;2013-01-07
5. MBE of dilute-nitride optoelectronic devices;Molecular Beam Epitaxy;2013
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