1.34 [micro sign]m GaInNAs quantum well lasers with low room-temperature threshold current density
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20061325?crawler=true&mimetype=application/pdf
Reference10 articles.
1. GaInNAs: a novel material for long-wavelength semiconductor lasers
2. High performance 1.28 [micro sign]m GaInNAs double quantum well lasers
3. Low-threshold 1317-nm InGaAsN quantum-well lasers with GaAsN barriers
4. Room-temperature continuous-wave 1.55 [micro sign]m GaInNAsSb laser on GaAs
5. Towards high performance GaInAsN∕GaAsN laser diodes in 1.5 μm range
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1. Importance of Overcoming MOVPE Surface Evolution Instabilities for >1.3 μm Metamorphic Lasers on GaAs;Crystal Growth & Design;2021-02-23
2. GaInNAs(Sb) Long-Wavelength VCSELs;Springer Series in Optical Sciences;2012-10-16
3. Metalorganic Vapor-Phase Epitaxy of Diluted Nitrides and Arsenide Quantum Dots;Springer Handbook of Crystal Growth;2010
4. Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method;Journal of Crystal Growth;2009-03
5. 1310 nm GaInNAs triple quantum well laser with 13 GHz modulation bandwidth;Electronics Letters;2009
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