High performance 1.28 [micro sign]m GaInNAs double quantum well lasers
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20053210?crawler=true&mimetype=application/pdf
Reference11 articles.
1. GaInNAs: a novel material for long-wavelength semiconductor lasers
2. 7.8 GHz small-signal modulation bandwidth of 1.3 [micro sign]m DQW GaInAsN/GaAs laser diodes
3. 9.7 GHz small-signal bandwidth of three-quantum well GaInNAs∕GaAs laser diodes operating at 1.35 [micro sign]m
4. Static and dynamic characteristics of 1.29-μm GaInNAs ridge-waveguide laser diodes
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