Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1674-1056/22/i=3/a=037802/pdf
Reference21 articles.
1. Band gap of GaAs1−xBix, 0
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3. Valence band anticrossing in GaBixAs1−x
4. Room temperature operation of 8–12 μm InSbBi infrared photodetectors on GaAs substrates
5. Growth of GaSb1−xBix by molecular beam epitaxy
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