Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y2O3 on Ge
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-Insulator substrates
2. MBE-grown high gate dielectrics of HfO2 and (Hf–Al)O2 for Si and III–V semiconductors nano-electronics
3. Cubic HfO2 doped with Y2O3 epitaxial films on GaAs (001) of enhanced dielectric constant
4. Initial growth of Ga2O3(Gd2O3) on GaAs: Key to the attainment of a low interfacial density of states
Cited by 41 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. General Method for Predicting Interface Bonding at Various Oxide–Metal Interfaces;Surfaces;2024-06-03
2. Fabrication and characterization of germanium n-MOS and n-MOSFET with thermally oxidized yttrium gate insulator: Formation of underlying germanium oxide and its electrical characteristics;Materials Science in Semiconductor Processing;2023-08
3. Trap Reduction through O 3 Post‐Deposition Treatment of Y 2 O 3 Thin Films Grown by Atomic Layer Deposition on Ge Substrates;Advanced Electronic Materials;2021-01-12
4. Study on Structural and Thermal Characteristics of Heteroleptic Yttrium Complexes as Potential Precursors for Vapor Phase Deposition;European Journal of Inorganic Chemistry;2020-09-24
5. Low-temperature grown single-crystal Si on epi Ge(001)-2 × 1 and its oxidation: electronic structure study via synchrotron radiation photoemission;Applied Physics Express;2020-07-08
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3