Design elements affecting wafer temperature uniformity in multi-wafer production MBE systems
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference5 articles.
1. Growth related interference effects in band edge thermometry of semiconductors
2. Infra-red transmission spectroscopy of GaAs during molecular beam epitaxy
3. T.J. Rogers, L. Li, R. Yanka, C. Santana, J.R. Williams, C.A. Taylor II, D. Barlett, in: Proceedings of 2008 International Conference on Compound Semiconductor MANufacturing TECHnology, 2008, p. 53.
4. Factors affecting the temperature uniformity of semiconductor substrates in molecular-beam epitaxy
5. Improvement of substrate temperature uniformity by using a dual-zone substrate heater in a commercial 4 in. GEN-III molecular beam epitaxy single-wafer reactor
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1. Molecular Beam Epitaxy as a Mass Production Enabling Technology for Electronic/Optoelectronic Devices;Molecular Beam Epitaxy;2018
2. Temperature mapping using single wavelength pyrometry during epitaxial growth;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-11
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