Factors affecting the temperature uniformity of semiconductor substrates in molecular-beam epitaxy-Reference-Cited by-同舟云学术

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Factors affecting the temperature uniformity of semiconductor substrates in molecular-beam epitaxy

Published:1994-03 Issue:2 Volume:12 Page:1225
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Johnson S. R.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In situ thickness and temperature measurements of CdTe grown by molecular beam epitaxy on GaAs substrate;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-07

2. Design elements affecting wafer temperature uniformity in multi-wafer production MBE systems;Journal of Crystal Growth;2009-03

3. InP Etching Using Chemically Assisted Ion Beam Etching ( Cl2 / Ar ) Formation of InCl x Clusters under High Concentration of Chlorine;Journal of The Electrochemical Society;1999-05-01

4. Measurement of MBE substrate temperature by photoluminescence;Journal of Crystal Growth;1997-05

5. Indium-induced smoothing of GaAs films during MBE growth;Canadian Journal of Physics;1996-12-01

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