Improvement of substrate temperature uniformity by using a dual-zone substrate heater in a commercial 4 in. GEN-III molecular beam epitaxy single-wafer reactor

Author:

Fang X. M.,Yurasits T. R.,Loubychev D.,Wu Y.,Liu W. K.,DeBruzzi M.,Priddy S.,Schiprett C.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Composition uniformity characterization and improvement of AlGaAs/GaAs grown by molecular beam epitaxy;Materials Science in Semiconductor Processing;2018-06

2. Proper In deposition amount for on-demand epitaxy of InAs/GaAs single quantum dots;Chinese Physics B;2016-09-23

3. Temperature mapping using single wavelength pyrometry during epitaxial growth;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-11

4. Design elements affecting wafer temperature uniformity in multi-wafer production MBE systems;Journal of Crystal Growth;2009-03

5. Thermal imaging of wafer temperature in MBE using a digital camera;Journal of Crystal Growth;2007-04

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