Proper In deposition amount for on-demand epitaxy of InAs/GaAs single quantum dots-Reference-Cited by-同舟云学术

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Proper In deposition amount for on-demand epitaxy of InAs/GaAs single quantum dots

Published:2016-09-23 Issue:10 Volume:25 Page:107805
ISSN:1674-1056
Container-title:Chinese Physics B
language:
Short-container-title:Chinese Phys. B

Author:

Shang Xiang-Jun,Xu Jian-Xing,Ma Ben,Chen Ze-Sheng,Wei Si-Hang,Li Mi-Feng,Zha Guo-Wei,Zhang Li-Chun,Yu Ying,Ni Hai-Qiao,Niu Zhi-Chuan

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/1674-1056/25/10/107805/pdf

Reference23 articles.

1. Field-Field and Photon-Photon Correlations of Light Scattered by Two Remote Two-Level InAs Quantum Dots on the Same Substrate

2. Electrically driven quantum dot-micropillar single photon source with 34% overall efficiency

3. Two-photon interference of the emission from electrically tunable remote quantum dots

4. Single-photon-emitting diode at liquid nitrogen temperature

5. Third emission mechanism in solid-state nanocavity quantum electrodynamics

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Broadband enhancement and high extraction efficiency from single quantum dots embedded in microlenses coupled with a gold mirror;Applied Physics Letters;2024-01-22

2. Annealing-Modulated Surface Reconstruction for Self-Assembly of High-Density Uniform InAs/GaAs Quantum Dots on Large Wafers Substrate;Nanomaterials;2023-06-28

3. Light Hole Excitons in Strain-Coupled Bilayer Quantum Dots with Small Fine-Structure Splitting;Crystals;2022-08-10

4. Symmetric Excitons in an (001)-Based InAs/GaAs Quantum Dot Near Si Dopant for Photon-Pair Entanglement;Crystals;2021-09-30

5. Wet-Etched Microlens Array for 200 nm Spatial Isolation of Epitaxial Single QDs and 80 nm Broadband Enhancement of Their Quantum Light Extraction;Nanomaterials;2021-04-27

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