Analysis of twin formation in sphalerite-type compound semiconductors: A model study on bulk InP using statistical methods
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. D.T.J. Hurle, Speculation Concerning the Causes of Twinning during Czochralski Growth of Crystals having Diamond Cubic or Zinc-blende Structure, 1991.
2. Stacking fault energy and ionicity of cubic III–V compounds
3. A mechanism for twin formation during Czochralski and encapsulated vertical Bridgman growth of III–V compound semiconductors
4. New insight into the origin of twin and grain boundary in InP
5. Growth of semi-insulating GaAs crystals in low temperature gradients by using the Vapour Pressure Controlled Czochralski Method (VCz)
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