Analysis of twin formation in sphalerite-type compound semiconductors: A model study on bulk InP using statistical methods-Reference-Cited by-同舟云学术

Analysis of twin formation in sphalerite-type compound semiconductors: A model study on bulk InP using statistical methods

Published:2008-12 Issue:24 Volume:310 Page:5270-5277
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Neubert M.,Kwasniewski A.,Fornari R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference18 articles.

1. D.T.J. Hurle, Speculation Concerning the Causes of Twinning during Czochralski Growth of Crystals having Diamond Cubic or Zinc-blende Structure, 1991.

2. Stacking fault energy and ionicity of cubic III–V compounds

3. A mechanism for twin formation during Czochralski and encapsulated vertical Bridgman growth of III–V compound semiconductors

4. New insight into the origin of twin and grain boundary in InP

5. Growth of semi-insulating GaAs crystals in low temperature gradients by using the Vapour Pressure Controlled Czochralski Method (VCz)

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