Growth of semi-insulating GaAs crystals in low temperature gradients by using the Vapour Pressure Controlled Czochralski Method (VCz)-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Growth of semi-insulating GaAs crystals in low temperature gradients by using the Vapour Pressure Controlled Czochralski Method (VCz)

Published:2001-01 Issue:2-3 Volume:43 Page:119-185
ISSN:0960-8974
Container-title:Progress in Crystal Growth and Characterization of Materials
language:en
Short-container-title:Progress in Crystal Growth and Characterization of Materials

Author:

Neubert M.,Rudolph P.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science

Reference116 articles.

1. Bulk growth of GaAs An overview

2. T. Henderson, W. L. Chen, M. Sanna, 1997 GaAs pp. 38 – 41, MANTECH, San Francisco, June 2 – 5, 1997.

3. Market Report,1997

4. State of the art 6″ SI GaAs wafers made of conventionally grown LEC-crystals

Cited by 51 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Contributions to the development of crystal growth technologies;Journal of Crystal Growth;2024-01

2. A novel route to fibers with volatile crystalline semiconductor cores part 2: Selenides and phosphides;Optical Materials;2023-11

3. Diameter Prediction of Silicon Ingots in the Czochralski Process Based on a Hybrid Deep Learning Model;Crystals;2022-12-25

4. Preparation, modification, and coating for carbon-bonded carbon fiber composites: A review;Ceramics International;2022-06

5. Lumped Parameter Model for Silicon Crystal Growth from Granulate Crucible;Crystal Research and Technology;2020-06-16

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP