Propagation of misfit dislocations from AlN/Si interface into Si
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction
2. MOVPE growth of GaN on Si(111) substrates
3. In situ monitoring of the stress evolution in growing group-III-nitride layers
4. Gallium arsenide and other compound semiconductors on silicon
5. Defect structure in selectively grown GaN films with low threading dislocation density
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