MOVPE growth of dilute nitride III/V semiconductors using all liquid metalorganic precursors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference61 articles.
1. Excitonic luminescence and absorption in dilute GaAs1−xNx alloy (x<0.3%)
2. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
3. Gas-Source Molecular Beam Epitaxy of $\bf GaN_{\ninmbi x}As_{1-{\ninmbi x}}$ Using a N Radical as the N Source
4. Properties of molecular-beam epitaxy-grown GaNAs from optical spectroscopy
5. Bowing parameter of the band-gap energy of GaNxAs1−x
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