Etch characteristics of HfO2 thin films by using CF4/Ar inductively coupled plasma
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference29 articles.
1. Characterization of Thermal and Electrical Stability of MOCVD HfO[sub 2]-HfSiO[sub 4] Dielectric Layers with Polysilicon Electrodes for Advanced CMOS Technologies
2. Characteristics of HfO[sub 2]/HfSi[sub x]O[sub y] film as an alternative gate dielectric in metal–oxide–semiconductor devices
3. Wet chemical etching studies of Zr and Hf-silicate gate dielectrics
4. Hamada D, Osari K, Nakamura K, Eriguchi K, Ono K, Oosawa M, et al, 6th Proc Int Symp Dry Process, (2006) p. 11.
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