Effect of pulse phase lag in the dual synchronized pulsed capacitive coupled plasma on the etch characteristics of SiO2 by using a C4F8/Ar/O2 gas mixture-Reference-Cited by-同舟云学术

Effect of pulse phase lag in the dual synchronized pulsed capacitive coupled plasma on the etch characteristics of SiO2 by using a C4F8/Ar/O2 gas mixture

Published:2015-11 Issue: Volume:121 Page:294-299
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Jeon Min Hwan,Yang Kyung Chae,Kim Kyong Nam,Yeom Geun Young

Funder

Ministry of Knowledge Economy

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference16 articles.

1. Developments of Plasma Etching Technology for Fabricating Semiconductor Devices

2. Challenges of High Aspect Ratio Oxide Etching

3. Effects of CH[sub 2]F[sub 2] Addition on a High Aspect Ratio Contact Hole Etching in a C[sub 4]F[sub 6]/O[sub 2]/Ar Plasma

4. Investigation of Bowing Reduction in SiO2Etching Taking into Account Radical Sticking in a Hole

5. Investigations of surface reactions during C2F6 plasma etching of SiO2 with equipment and feature scale models

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