Optical and structural investigation of GaNxP1−x/GaP structures for light emitting diodes
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference8 articles.
1. Isoelectronic Traps Due to Nitrogen in Gallium Phosphide
2. Optical transitions in the isoelectronically doped semiconductor GaP:N: An evolution from isolated centers, pairs, and clusters to an impurity band
3. Isoelectronic Traps Due to Nitrogen in Gallium Phosphide
4. Intermediate range between N-doped GaP and GaP1-xNx alloys: difference in optical properties
5. Composition dependence of interband transition intensities in GaPN, GaAsN, and GaPAs alloys
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1. A study of the physical properties of GaN, GaP and their mixed ternary alloys for the applications in optoelectronics devices;Bulletin of Materials Science;2023-03-28
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3. The factors contributing to the band gap bowing of the dilute nitride GaNP alloy;Applied Physics A;2014-06-27
4. The evolution of the band gap energy of the P-rich GaNxP1−x(0;Physica B: Condensed Matter;2013-10
5. The parameters in the band-anticrossing model for In x Ga1−x N y P1−y before and after annealing;Science China Physics, Mechanics and Astronomy;2011-08-17
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