Degradation of AlGaInP light emitting diodes under reverse-bias operations in salty water vapor-Reference-Cited by-同舟云学术

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Degradation of AlGaInP light emitting diodes under reverse-bias operations in salty water vapor

Published:2015-08 Issue: Volume:118 Page:13-16
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Chen Hsiang,Chu Li-Chen,Lee Ming Ling,Kang Nai Chung,Shei Shih-Chang,Chang Hung Wei,Chu Yu Cheng,Shen Huan Yu,Chen Chin Pang,Chang Kow Ming

Funder

National Science Council

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference12 articles.

1. Optical and structural investigation of GaNxP1−x/GaP structures for light emitting diodes

2. Degradation of High-Brightness Green LEDs Submitted to Reverse Electrical Stress

3. Low temperature synthesis of GaN films on ITO substrates by ECR-PEMOCVD

4. Leakage current and reverse-bias luminescence in InGaN-based light-emitting diodes

5. Hot carrier-induced emission from the InGaN/GaN light-emitting diode by characterizing reverse-bias electroluminescence

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Machine Vision Observation, Artificial Intelligence Pattern Recognition, Protective Circuit Design, Characterization of Multiple Materials, and Nano-Structural Analysis for Investigating InGaN Green Light Emitting Diode Degradation in a Salty Water Vapor Environment;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

2. Degradation mechanisms of bias stress on nitride-based near-ultraviolet light-emitting diodes in salt water vapor ambient;Microelectronic Engineering;2019-10

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