The evolution of the band gap energy of the P-rich GaNxP1−x(0<x≤0.05) on composition and temperature-Reference-Cited by-同舟云学术

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The evolution of the band gap energy of the P-rich GaNxP1−x(0

Published:2013-10 Issue: Volume:427 Page:58-61
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Zhao Chuan-Zhen,Wei Tong,Li Na-Na,Wang Sha-Sha,Lu Ke-Qing

Funder

Science and Technology Plans of Tianjin

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. From N isoelectronic impurities to N-induced bands in the GaNxAs1−x alloy

2. Temperature dependence of photoluminescence and photoreflectance spectra of dilute GaAsN alloys

3. Temperature and Composition Dependence of GaN x As 1−x (0

4. Band parameters for nitrogen-containing semiconductors

5. Nature of the fundamental band gap in GaNxP1−x alloys

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1. Modeling and optimization of Sb and N resonance states effect on the band structure of mismatched III-N-V alloys using artificial neural networks;Materials Science and Engineering: B;2023-04

2. The temperature dependence of the band-gap energy of the dilute oxygen ZnO x Se1−x;Applied Physics A;2017-02

3. A model describing the pressure dependence of the band gap energy for the group III–V semiconductors;Physica B: Condensed Matter;2016-08

4. Composition dependence of the band gap energy for the dilute nitride and As-rich GaNxSbyAs1−x−y (0≤x≤0.05, 0≤y≤0.3);Physica B: Condensed Matter;2016-03

5. The factors contributing to the band gap bowing of the dilute nitride GaNP alloy;Applied Physics A;2014-06-27

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