The temperature dependence of the band-gap energy of the dilute oxygen ZnO x Se1−x-Reference-Cited by-同舟云学术

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The temperature dependence of the band-gap energy of the dilute oxygen ZnO x Se1−x

Published:2017-02 Issue:2 Volume:123 Page:
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Zhao Chuan-Zhen,Sang Si,Wei Tong,Wang Sha-Sha,Lu Ke-Qing

Funder

National Nature Science Foundation of China

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/article/10.1007/s00339-016-0730-3/fulltext.html

Reference30 articles.

1. Y. Nabetani, T. Mukawa, Y. Ito, T. Kato, T. Matsumoto, Appl. Phys. Lett. 83, 1148 (2003)

2. A. Belabbes, M. A, Zaoui, Ferhat, J. Phys. Condens. Matter. 19, 456212 (2007)

3. M.A. Mayer, K.M. Yu, D.T. Speaks, J.D. Denlinger, L.A. Reichertz, J.W. Beeman, E.E. Haller, W. Walukiewicz, J. Phys. Chem. C. 116, 15281 (2012)

4. V. V. Khomyak, O. M. Slyotov, S. M. Chupyra, Appl. Opt. 53, B110 (2014)

5. J.C. Lee, J.E. Lee, J.W. Lee, J.C. Lee, N.G. Subramaniam, T.W. Kang, R. Ahuja, J. Alloy. Compd. 585, 94 (2014)

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1. Lattice constant and band gap of ZnOxSe1−x (0 ≤ x ≤ 0.25) acquired by the first-principles calculations;Applied Physics A;2021-12-12

2. The bandgap energy of the dilute bismuth GaBi x Sb1−x alloy depending on temperature;Materials Science-Poland;2021-09-01

3. The localized effect of the Bi level on the valence band in the dilute bismuth GaBixAs1-x alloy;Superlattices and Microstructures;2018-05

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