Infrared spectroscopic analysis of reactively formed La-silicate interface layer at La 2 O 3 /Si substrates
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference19 articles.
1. Ultimate scaling of high-κ gate dielectrics: higher-κ or interfacial layer scavenging?;Ando;Materials,2012
2. Molybdenum-gate HfO2 CMOS FinFET technology, Tech. Digest of International Electron Devices Meeting (IEDM);Ha,2004
3. Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications;Gusev;Microelectron. Eng.,2009
4. Spatial distributions of trapping centers in HfO2/SiO2 gate stacks;Heh;Appl. Phys. Lett.,2006
5. Low-frequency noise behavior of SiO2-HfO2 dual-layer gate dielectric nMOSFET with different interfacial oxide thickness;Simoen;IEEE Trans. Electron Dev.,2004
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Plasma-enhanced atomic layer-deposited La2O3 ultra-thin films on Si and 6H–SiC: a comparative study;Applied Physics A;2020-07-31
2. Alternate lanthanum oxide/silicon oxynitride-based gate stack performance enhancement due to ultrathin oxynitride interfacial layer for CMOS applications;Journal of Materials Science: Materials in Electronics;2019-12-16
3. Advances in La-Based High-k Dielectrics for MOS Applications;Coatings;2019-03-27
4. Effect of lanthanum silicate interface layer on the electrical characteristics of 4H-SiC metal-oxide-semiconductor capacitors;Microelectronics Reliability;2018-05
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3