Spatial distributions of trapping centers in HfO2∕SiO2 gate stacks-Reference-Cited by-同舟云学术

Spatial distributions of trapping centers in HfO2∕SiO2 gate stacks

Published:2006-04-10 Issue:15 Volume:88 Page:152907
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Heh Dawei,Young Chadwin D.,Brown George A.,Hung P. Y.,Diebold Alain,Bersuker Gennadi,Vogel Eric M.,Bernstein Joseph B.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2195896

Reference19 articles.

1. E. Wu, S. H. Lo, W. Abadeer, A. Acovic, D. Buchanan, T. Furukawa, D. Brochu, and R. Dufresne, Proceedings of the International Reliability Physics Symposium, 1997, p. 184.

2. Impact of the trapping of anode hot holes on silicon dioxide breakdown

3. Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown

4. Low Weibull slope of breakdown distributions in high-k layers

Cited by 58 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reliability Instability Assessment with Interfacial Trapping Analysis for the Optimization of Al Composition in Al_xGa_1−xN/GaN High Electron Mobility Transistors;physica status solidi (a);2024-01-15

2. Experimental investigation of time dependent dielectric breakdown and failure mechanism for Hf0.5Zr0.5O2 ferroelectric field effect transistors;Solid-State Electronics;2023-07

3. Impact of Charge-Trapping Effects on Reliability Instability in AlxGa1−xN/GaN High-Electron-Mobility Transistors with Various Al Compositions;Materials;2023-06-19

4. Memory window enhancement in n-type ferroelectric field-effect transistors by engineering ozone exposure in atomic layer deposition of HfZrOx films;Applied Physics Letters;2023-06-05

5. Combining electrically detected magnetic resonance techniques to study atomic-scale defects generated by hot-carrier stressing in HfO2/SiO2/Si transistors;Journal of Applied Physics;2023-04-12